ANovelSubstrateIntegratedArtificialDielectricPower/GroundLayerforWidebandSimultaneously510152025303540SwitchingNoiseSuppression#SHIYongrong,LIUSheng,WANGCheng,TANGWanchun**(DepartmentofCommunicationEngineering,SchoolofElectronicandOpticalEngineering,Nan激ngUniversityofScienceTechnology,Nan激ng210094)Abstract:AnovelSubstrateIntegratedArtificialDielectric(SIAD)power/groundlayer(SIAD-PL)isdesignedwithwidebandmitigationofthesimultaneouslyswitchingnoise(SSN)almostfrom2.0GHzto9.5GHz(over-30dB).TheSIAD-PLisdesignedbyperiodicallyembeddingmetalrodsintothesubstratebetweenpowerplaneandgroundplane.TheSSNsuppressionofSIAD-PLispredictedbythedispersiondiagramandtheequivalentcircuitmodelestablishedbymodeldecomposingandtransmission-linematrixmethod.TheexcellentNoisemitigationperformanceisvalidatedbysimulationandmodeling.Goodagreementisobserved.Keywords:Powerintegrity(PI);simultaneouslyswitchingnoise(SSN);substrateintegratedartificialdielectric(SIAD)0IntroductionWiththeincreasingdemandformoderncircuitswithfastedgerates,highoperatingfrequency,andlowsupplyvoltage,simultaneouslyswitchingnoise(SSN)onthepower/groundplanesisplayinganimportantroleinthehigh-speedcircuitdesign[1].Thebehaviorofthepower/groundplaneactsasaparallelplateresonator.TheresonantmodesbetweenthepowerplaneandgroundplaneexcitedbytheSSNinducesignificantsignalintegrity(SI),powerintegrity(PI)problemsandelectromagneticinterference(EMI)issuesforhigh-speedcircuitsdesign[2]-[10].SeveralresearcheshavecontributedtothesuppressionofSSN.Addingdecouplingcapacitorsbetweenpower/groundplanesisapopularwaytoeliminateSSNandreduceEMI,buttheyareuselessaboveseveralhundredmegahertzduetotheparasiticinductance[1].Etchingarectangularslotonthepowerplanemetalisanothertypicalsolution,butwhenthepowerplaneistakenasthereferenceplane,thesegmentofthepowerplanecancauseSIandEMIproblemsbecausesignaltracesareforcedtocrossadiscontinuity[3].Recently,anoveltechnologyusingelectromagneticband-gap(EBG)structureonthepower/groundplanesisproposedtomitigatetheSSN.SeveraltypesofEBGstructureshavebeenproposedtoisolatethepowernoise,suchasthemushroom-likeEBG[4]-[5]orplanarEBG(LPC-EBGandL-bridgeEBG)structure[6]-[8].Themushroom-likeEBGneedsthreemetallayersandadditionalmetalviaandthecostishigh.However,theapplicationoftheplanarEBGstructuresbyetchingthemetalpowerorgroundplaneswouldcausetheSIproblemforsignals[7].TosolvetheSIproblem,aphotoniccrystalpower/groundlayer(PCPL)[9]-[10]isproposed.ButtheimplementationofPCPLstructureinstandardpackageorPCBfabricationprocessisdifficultandcomplex,andthecostishigh.Anovelpower/groundlayerdesignedwithSubstrateIntegratedArtificialDielectric(SIAD)structureisproposed[11].TheSIADstructureisfirstlyproposedbyCoulombeandNguyenin2007[12]toreducethesizeofplanarmicrostripcircuit.Inthispaper,theEBGcharacteristicoftheSIADisused,andtheSIAD-PLisformedbyperiodicallyembeddingthemetalrodsintothesubstrateFoundations:SpecializedResearchFundfortheDoctoralProgramofHigherEducationinChina(No.20103219110017);theMajorStateBasicResearchDevelopmentProgramofChina(No.2009CB320201)Briefauthorintroduction:SHIYongrong(1988-),male,Ph.D.degreecandidate,Mainresearch:signalintegrityandpowerintegrityanalysisofthehigh-speedpackageCorrespondanceauthor:TANGWanchun(1967-),male,FullProfessor,Mainresearch:modelingandoptimizationofRFIC,signalintegrityandpowerintegritydesigninpackage.E-mail:ee...