AModelofMOSFET’sSecondBreakdownActioninCircuit-LevelCUIQiang1,HANYan1,LIUJun-jie1,2,DONGShu-rong1,SIRui-jun11.InstituteofMicroelectronicsandPhotoelectronics,ZhejiangUniversity,Hangzhou310027,China2.DepartmentofElectricalandComputerEngineering,UniversityofCentralFlorida,Orlando,FL32816USAAbstract:AmethodtoexacttheelectricalparametersandmodelthesecondbreakdownactionofMOSFET’sund...